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On Semiconductor N/A BD 810 PNP Case type TO 220 AB I(C) 10 BD810G Data Sheet

Product codes
BD810G
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©  Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 6
1
Publication Order Number:
BD809/D
BD809 (NPN), BD810 (PNP)
Plastic High Power
Silicon Transistor
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
Features
•
DC Current Gain − h
FE
 = 30 (Min) @ I
C
 = 2.0 Adc
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
CEO
80
Vdc
Collector−Base Voltage
V
CBO
80
Vdc
Emitter−Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
10
Adc
Base Current
I
B
6.0
Adc
Total Device Dissipation @ T
C
 = 25°C
Derate above 25°C
P
D
90
0.72
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q
JC
1.39
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
POWER TRANSISTORS
80 VOLTS
90 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
http://onsemi.com
MARKING DIAGRAM
BD8xx =
Device Code
x = 09 or 10
A
=
Assembly Location
Y
=
Year
WW
=
Work Week
G
=
Pb−Free Package
2
3
BD8xxG
AY   WW
See detailed ordering and shipping information in the package
ORDERING INFORMATION