Infineon Technologies N/A BCX 42 PNP Case type SOT 23 I(C) 0 BCX42 Data Sheet
Product codes
BCX42
2011-10-04
1
BCX42
1
2
3
PNP Silicon AF and Switching Transistor
• For general AF applications
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BCX41 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BCX41 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCX42
DKs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
125
V
Collector-base voltage
V
CBO
125
Emitter-base voltage
V
EBO
5
Collector current
I
C
800
mA
Peak collector current, t
p
≤ 10 ms
I
CM
1
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
T
T
S
≤ 79 °C
P
tot
330
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
≤ 215
K/W
1
For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)