Infineon Technologies N/A BCX 42 PNP Case type SOT 23 I(C) 0 BCX42 Data Sheet
Product codes
BCX42
2011-10-04
2
BCX42
Electrical Characteristics
at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
V
(BR)CEO
125
-
-
V
Collector-base breakdown voltage
I
I
C
= 100 µA, I
E
= 0
V
(BR)CBO
125
-
-
Emitter-base breakdown voltage
I
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
5
-
-
Collector-base cutoff current
V
V
CB
= 100 V, I
E
= 0
V
CB
= 100 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
-
-
-
0.1
20
µA
Collector-emitter cutoff current
V
V
CE
= 100 V, T
A
= 85 °C
V
CE
= 100 V, T
A
= 125 °C
I
CEO
-
-
-
-
-
-
10
75
75
Emitter-base cutoff current
V
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain
1)
I
C
= 100 µA, V
CE
= 1 V
I
C
= 100 mA, V
CE
= 1 V
I
C
= 200 mA, V
CE
= 1 V
h
FE
25
63
40
63
40
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage
1)
I
C
= 300 mA, I
B
= 30 mA
V
CEsat
-
-
0.9
V
Base emitter saturation voltage
1)
I
C
= 300 mA, I
B
= 30 mA
V
BEsat
-
-
1.4
AC Characteristics
Transition frequency
I
Transition frequency
I
C
= 20 mA, V
CE
= 5 V, f = 20 MHz
f
T
-
150
-
MHz
Collector-base capacitance
V
V
CB
= 10 V, f = 1 MHz
C
cb
-
12
-
pF
1
Pulse test: t < 300µs; D < 2%