Infineon Technologies NF transistor BSS 63 PNP Case type SOT 23 I(C) 10 mA BSS63 Data Sheet
Product codes
BSS63
Semiconductor Group
1
PNP Silicon AF and Switching Transistors
BCX 42
BSS 63
Maximum Ratings
Type
Ordering Code
(tape and reel)
(tape and reel)
Marking
Package
1)
Pin Configuration
BCX 42
BSS 63
BSS 63
Q62702-C1485
Q62702-S534
Q62702-S534
DKs
BMs
BMs
SOT-23
B
E
C
1
2
3
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
100
V
Collector-base voltage
V
CB0
110
Emitter-base voltage
V
EB0
5
Collector current
I
C
800
mA
Peak collector current
I
CM
1
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation,
T
S
= 79 ˚C
P
tot
330
mW
Junction temperature
T
j
150
˚C
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
≤
285
K/W
125
125
5
BSS 63
BCX 42
Junction - soldering point
R
th JS
≤
215
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
●
For general AF applications
●
High breakdown voltage
●
Low collector-emitter saturation voltage
●
Complementary types: BCX 41, BSS 64 (NPN)
5.91