Infineon Technologies NF transistor BSS 63 PNP Case type SOT 23 I(C) 10 mA BSS63 Data Sheet
Product codes
BSS63
Semiconductor Group
2
BCX 42
BSS 63
Electrical Characteristics
at
at
T
A
= 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BCX 42
BSS 63
BSS 63
V
(BR)CE0
125
100
100
–
–
–
–
–
–
MHz
Transition frequency
I
C
= 20 mA
, V
CE
= 5 V,
f
= 20 MHz
f
T
–
150
–
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
–
12
–
AC characteristics
Collector-base breakdown voltage
1)
I
C
= 100
µ
A
BCX 42
BSS 63
BSS 63
V
(BR)CB0
125
110
110
–
–
–
–
–
–
µ
A
Collector cutoff current
V
CE
= 100 V
T
A
= 85 ˚C
BCX 42
T
A
= 125 ˚C
BCX 42
I
CE0
–
–
–
–
–
–
10
75
75
Emitter-base breakdown voltage,
I
E
= 10
µ
A
V
(BR)EB0
5
–
–
nA
nA
nA
µ
A
µ
A
Collector cutoff current
V
CB
= 80 V
BSS 63
V
CB
= 100 V
BCX 42
V
CB
= 80 V,
T
A
= 150 ˚C
BSS 63
V
CB
= 100 V,
T
A
= 150 ˚C
BCX 42
I
CB0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
20
20
100
20
20
nA
Emitter cutoff current,
V
EB
= 4 V
I
EB0
–
–
100
–
DC current gain
1)
I
C
= 100
µ
A,
V
CE
= 1 V
BCX 42
I
C
= 10 mA,
V
CE
= 5 V
BSS 63
I
C
= 20 mA,
V
CE
= 5 V
BSS 63
I
C
= 100 mA,
V
CE
= 1 V
BCX 42
I
C
= 200 mA,
V
CE
= 1 V
BCX 42
h
FE
25
30
30
63
40
30
30
63
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
Collector-emitter saturation voltage
1)
I
C
= 300 mA,
I
B
= 30 mA
BCX 42
I
C
= 25 mA,
I
B
= 2.5 mA
BSS 63
I
C
= 75 mA,
I
B
= 7.5 mA
BSS 63
V
CEsat
–
–
–
–
–
–
–
–
–
–
0.9
0.25
0.9
0.25
0.9
Base-emitter saturation voltage
1)
I
C
= 300 mA,
I
B
= 30 mA
BCX 42
V
BEsat
–
–
1.4
1)
Pulse test:
t
≤
300
µ
s,
D
=
2 %