Nxp Semiconductors BU2523DF BU Transistor NPN SOT 199 11A 800V BU2523DF Data Sheet
Product codes
BU2523DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DF
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.9. Typical losses.
P
TOT
= f (I
B
); I
C
= 5.5 A; f = 64 kHz
Fig.10. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 5.5 A; T
j
= 85˚C; f = 64 kHz
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
mb
)
Fig.12. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0.1
1
10
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
Ths = 85 C
IC/IB = 10
IC/IB = 5
VCEsat / V
BU2523DF/X
IC / A
0
0.5
1
1.5
2
0
1
2
3
4
5
ts/tf / us
BU2523AF/DF/AX/DX
IB / A
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
VBEsat / V
BU2523DF/X
IB / A
IC = 6 A
IC = 4.5 A
Ths = 25 C
Ths = 85 C
Ths = 85 C
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2523AF/DF/AX/DX
0
0.5
1
1.5
2
1
10
100
PTOT / W
IB / A
Ths = 25 C
Ths = 85 C
Ths = 85 C
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
September 1997
4
Rev 1.200