Nxp Semiconductors BU2523DF BU Transistor NPN SOT 199 11A 800V BU2523DF Data Sheet
Product codes
BU2523DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 6.0 V; I
C
= 0 A
80
130
170
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
800
-
-
V
L = 25 mH
R
be
Base-emitter resistance
V
EB
= 7.5 V
-
46
-
Ω
V
CEsat
Collector-emitter saturation voltage
I
C
= 5.5 A; I
B
= 1.1 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 5.5 A; I
B
= 1.1 A
-
-
1.0
V
h
FE
DC current gain
I
C
= 1.0 A; V
CE
= 5 V
-
12
-
h
FE
I
C
= 5.5 A; V
CE
= 5 V
5
7.5
10.8
V
F
Diode forward voltage
I
F
= 5.5 A
-
-
2.2
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (64 kHz line
I
Csat
= 5.5 A; L
C
= 200
µ
H; C
fb
= 4 nF;
deflection circuit)
V
CC
= 145 V; I
B(end)
= 0.56 A;
L
B
= 0.4
µ
H; -V
BB
= -4 V;
-I
BM
= 3.3 A
t
s
Turn-off storage time
1.5
2
µ
s
t
f
Turn-off fall time
0.15
0.3
µ
s
V
fr
Anti-parallel diode forward recovery
I
F
= 5.5 A; dI
F
/dt = 50 A/
µ
s
16.5
-
V
voltage
t
fr
Anti-parallel diode forward recovery
V
F
= 5 V
375
-
ns
time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200