Nxp Semiconductors BU2508AW BU Transistor NPN SOT 429 (TO 247) 8A 700V BU2508AW Data Sheet
Product codes
BU2508AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
Fig.9. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; f = 16 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 16 kHz
Fig.13. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.14. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
mb
)
0
1
2
3
4
IB / A
VBESAT / V
BU2508A
1.2
1.1
1
0.9
0.8
0.7
0.6
6A
4.5A
3A
2A
2A
Tj = 25 C
Tj = 125 C
IC=
0.1
1
10
IB / A
ts, tf / us
BU2508A
12
11
10
11
10
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
IC =
3.5A
4.5A
tf
ts
0.1
1
10
IB / A
VCESAT / V
BU2508A
10
1
0.1
Tj = 25 C
Tj = 125 C
3A
4.5A
6A
IC=2A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
D = 0
0.02
0.05
0.1
0.2
0.5
D =
t
p
t
p
T
T
P
t
D
0.1
1
10
IB / A
Eoff / uJ
BU2508A
1000
100
10
3.5A
IC = 4.5A
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
September 1997
4
Rev 1.100