Nxp Semiconductors BU2508AW BU Transistor NPN SOT 429 (TO 247) 8A 700V BU2508AW Data Sheet
Product codes
BU2508AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.12 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.7 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 100 mA;V
CE
= 5 V
-
13
-
h
FE
I
C
= 4.5 A;V
CE
= 1 V
4
5.5
7.0
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
80
-
pF
Switching times (16 kHz line
I
Csat
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
µ
H;
deflection circuit)
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
µ
s)
t
s
Turn-off storage time
5.0
6.0
µ
s
t
f
Turn-off fall time
0.4
0.6
µ
s
Switching times (38 kHz line
I
Csat
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
µ
H;
deflection circuit)
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
µ
s)
t
s
Turn-off storage time
4.7
5.7
µ
s
t
f
Turn-off fall time
0.25
0.35
µ
s
Fig.1. Test circuit for V
CEO
sust.
Fig.2. Oscilloscope display for V
CEO
sust.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100