Ixys IXGH72N60A3 IGBT 600V IXGH72N60A3 Data Sheet
Product codes
IXGH72N60A3
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH72N60A3
IXGT72N60A3
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 48 76
S
C
ies
6600
pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 360
pF
C
res
80
pF
Q
g
230
nC
Q
ge
I
C
= I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
40
nC
Q
gc
78
nC
t
d(on)
31
ns
t
ri
34
ns
E
on
1.38
mJ
t
d(off)
320
ns
t
fi
250
ns
E
off
3.5
mJ
t
d(on)
29
ns
t
ri
32
ns
E
on
2.6
mJ
t
d(off)
510
ns
t
fi
375
ns
E
off
6.5
mJ
R
thJC
0.23
°C/W
R
thCS
0.15
°C/W
Note 1: Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
Terminals: 1 - Gate
2 - Drain
1 2 3
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
Inductive load, T
J
= 25°C
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 3
Ω
Inductive load, T
J
= 125°C
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 3
Ω