ADATA Extreme Edition DDR2 800G 4GB-kit AD2800G002GOU2 User Manual

Product codes
AD2800G002GOU2
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HYQVE1B16_DDR2-800G(CL=5)_2GB(128Mx8_Pb free)     Rev.0       2009/02/12             Page 6 of 7 
Absolute Maximum Ratings
Κ
Parameter Symbol 
Value 
Unit 
Voltage on VDD supply relative to Vss 
V
DD
 
-1.0 ~ +2.3 
Voltage on VDDQ supply relative to Vss 
V
DDQ
 
-0.5 ~ +2.3 
Voltage on VDDL supply relative to Vss 
V
DDQ
 
-0.5 ~ +2.3 
Voltage on any pin relative to Vss 
V
IN
, V
out
 
-0.5 ~ +2.3 
Storage temperature 
T
STG
 
-55 ~ +100 
к
Note: DDR2 SDRAM component specification. 
Operation Temperature Condition 
Parameter Symbol 
Value 
Unit 
Note 
DRAM Component Case Temperature Range 
TC 
0~+95 
к
1
Note: (1) If the DRAM case temperature is above 85’C, the Auto-Refresh command interval has to be reduced to tREFI=3.9us. 
DC Operating Condition
Voltage referenced to Vss = 0V, VDD&VDDQ=1.8V
±0.1V, 
T
c
 = 0 to 85 
Parameter Symbol 
Min 
Max 
Unit 
Note 
V
DD
 1.7 
1.9 
4,5 
Supply Voltage 
V
DDSPD
 1.7 
3.6 
 
Supply Voltage for DLL 
V
DDL
 1.7 
1.9 
Supply Voltage for Output 
V
DDQ
 1.7 
1.9 
4,5 
Input Reference Voltage 
V
REF
 
0.49 x V
DDQ
 
0.51 x V
DDQ
 V 1,2 
Termination Voltage 
V
TT
 
V
REF 
- 0.04 
V
REF 
+ 0.04 
Note: (1) There is no specific device VDD supply voltage requirement for SSTL_1.8 compliance. However under all conditions VDDQ must be
less than or equal to VDD. 
            (2) The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically, the value of VREF is 
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ. 
            (3) Peak to peak ac noise on VREF may not exceed +/- 2% VREF (ac). 
            (4) VTT of transmitting device must track VREF of receiving device. 
            (5) VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together.