Intel 1.70 GHz RH80532NC029256 Data Sheet
Product codes
RH80532NC029256
Mobile Intel
®
Celeron
®
Processor (0.13 µ) in
Micro-FCBGA and Micro-FCPGA Packages Datasheet
82 Datasheet
298517-006
6.1 Thermal
Diode
The Mobile Intel Celeron Processor has an on-die thermal diode that should be used to monitor the die
temperature (T
temperature (T
J
). A thermal sensor located on the motherboard, or a stand-alone measurement kit,
should monitor the die temperature of the processor for thermal management or instrumentation
purposes. Table 49 and Table 50 provide the diode interface and specifications.
purposes. Table 49 and Table 50 provide the diode interface and specifications.
Note:
The reading of the thermal sensor connected to the thermal diode will not necessarily reflect the
temperature of the hottest location on the die. This is due to inaccuracies in the thermal sensor, on-die
temperature gradients between the location of the thermal diode and the hottest location on the die, and
time based variations in the die temperature measurement. Time based variations can occur when the
sampling rate of the thermal diode (by the thermal sensor) is slower than the rate at which the T
J
temperature can change.
Table 49. Thermal Diode Interface
Signal Name
Pin/Ball Number
Signal Description
THERMDA
AF13
Thermal diode anode
THERMDC
AF14
Thermal diode cathode
Table 50. Thermal Diode Specifications
Symbol Parameter Min
Typ
Max
Unit
Notes
n
Diode Ideality Factor (5-150uA)
1.0011 1.0067 1.0122
Notes 1, 2, 3, 4, 6
n
Diode Ideality Factor (5-300uA)
1.0003 1.0091 1.0178
Notes 1, 2, 3, 5, 6
NOTES:
1. Intel does not support or recommend operation of the thermal diode under reverse bias. Intel does not support
or recommend operation of the thermal diode when the processor power supplies are not within their specified
tolerance range.
tolerance range.
2. Characterized at 100°C.
3. Not 100% tested. Specified by design/characterization.
4. Specified for Forward Bias Current = 5
3. Not 100% tested. Specified by design/characterization.
4. Specified for Forward Bias Current = 5
µA (min) and 150 µA (max).
5. Specified for Forward Bias Current = 5
µA (min) and 300 µA (max).
6. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode equation:
Where I
s
= saturation current, q = electronic charge, V
d
= voltage across the diode, k = Boltzmann Constant,
and T = absolute temperature (Kelvin).
−
⋅
=
1
q
S
FW
nkT
V
D
e
I
I