Intel i5-4300Y CL8064701558601 Data Sheet

Product codes
CL8064701558601
Page of 123
register. Customers choosing to change the value of this register can do it by
changing it in the BIOS. For experiments, this register can be modified in real time if
BIOS does not lock the IMC registers.
Initialization Role of CKE
During power-up, CKE is the only input to the SDRAM that has its level recognized
(other than the DDR3L/DDR3L-RS reset pin) once power is applied. It must be driven
LOW by the DDR controller to make sure the SDRAM components float DQ and DQS
during power-up. CKE signals remain LOW (while any reset is active) until the BIOS
writes to a configuration register. Using this method, CKE is ensured to remain
inactive for much longer than the specified 200 micro-seconds after power and clocks
to SDRAM devices are stable.
Conditional Self-Refresh
During S0 idle state, system memory may be conditionally placed into self-refresh
 for more details on conditional self-
refresh with Intel HD Graphics enabled.
When entering the S3 – Suspend-to-RAM (STR) state or S0 conditional self-refresh,
the processor core flushes pending cycles and then enters SDRAM ranks that are not
used by Intel graphics memory into self-refresh. The CKE signals remain LOW so the
SDRAM devices perform self-refresh.
The target behavior is to enter self-refresh for package C3 or deeper power states as
long as there are no memory requests to service. The target usage is shown in the
following table.
Table 19.
Targeted Memory State Conditions
Mode
Memory State with Processor Graphics
Memory State with External Graphics
C0, C1, C1E
Dynamic memory rank power-down based on
idle conditions.
Dynamic memory rank power-down based on
idle conditions.
C3, C6, C7
or deeper
If the processor graphics engine is idle and
there are no pending display requests, then
enter self-refresh. Otherwise, use dynamic
memory rank power-down based on idle
conditions.
If there are no memory requests, then enter
self-refresh. Otherwise, use dynamic memory
rank power-down based on idle conditions.
S3
Self-Refresh Mode
Self-Refresh Mode
S4
Memory power-down (contents lost)
Memory power-down (contents lost)
Dynamic Power-Down
Dynamic power-down of memory is employed during normal operation. Based on idle
conditions, a given memory rank may be powered down. The IMC implements
aggressive CKE control to dynamically put the DRAM devices in a power-down state.
The processor core controller can be configured to put the devices in active power-
down (CKE de-assertion with open pages) or pre-charge power-down (CKE de-
assertion with all pages closed). Pre-charge power-down provides greater power
savings, but has a bigger performance impact since all pages will first be closed before
putting the devices in power-down mode.
4.3.2.1  
4.3.2.2  
4.3.2.3  
Power Management—Processors
Mobile 4th Generation Intel
®
 Core
 Processor Family, Mobile Intel
®
 Pentium
®
 Processor Family, and Mobile Intel
®
 Celeron
®
Processor Family
July 2014
Datasheet – Volume 1 of 2
Order No.: 329001-007
55