Intel C2518 FH8065501516710 Data Sheet
Product codes
FH8065501516710
Volume 3—Signal Names and Descriptions—C2000 Product Family
System DDR Memory Signals
Intel
®
Atom™ Processor C2000 Product Family for Microserver
Datasheet, Vol. 3 of 3
September 2014
580
Order Number: 330061-002US
DDR3_1_DQSB[7:0]
I/O
DDR
8
VDDR
DDR3 Data Strobes: During
writes, driven by CDV offset
so as to be centered in the
data phase. During reads,
driven by memory devices
edge-aligned with data. The
following list matches the data
strobe with the data bytes:
(DQS_7: DQ[63:56] ….
DQS_0: DQ[7:0]). The data
strobes may be used in single-
ended mode or paired with
optional complementary
signals DQS_B to provide
differential-pair signaling to
the system during both reads
and writes. A control bit at
EMR(1)[A10] enables or
disables all complementary
data strobe signals.
DDR3_1_DQSBECC[0]
I/O
DDR
1
VDDR
DDR3 ECC Strobe:
Differential-pair output with
read-data ECC, differential-
pair input with write-data
ECC. Edge-aligned with read-
data ECC, centered in write-
data ECC.
DDR3_1_CK[3:0]
O
DDR
4
VDDR
DDR3 Differential Clock: All
address and control input
signals are sampled on the
crossing of the positive edge
of CK and negative edge of
CKB. Output (read) data is
referenced to the crossings of
CK and CKB (both directions
of crossing).
DDR3_1_CKB[3:0]
O
DDR
4
VDDR
DDR3 Differential Clock: All
address and control input
signals are sampled on the
crossing of the positive edge
of CK and negative edge of
CKB. Output (read) data is
referenced to the crossings of
CK and CKB (both directions
of crossing).
Table 31-5. DDR1 Signals (Sheet 2 of 5)
Signal Name
I/O
Type
I/O Buffer
Type
Ball
Count
Internal
Resistor
PU/PD
External
Resistor
PU/PD
Power
Rail
Description