Intel C2350 FH8065401488914 Data Sheet

Product codes
FH8065401488914
Page of 746
Intel
®
 Atom™ Processor C2000 Product Family for Microserver
September 2014
Datasheet, Vol. 3 of 3
Order Number: 330061-002US
575
Volume 3—Signal Names and Descriptions—C2000 Product Family
System DDR Memory Signals
DDR3_0_DQSB[7:0]
I/O
DDR
8
VDDQ
DDR3 Data Strobes: During 
writes, driven by CDV offset 
so as to be centered in the 
data phase. During reads, 
driven by memory devices 
edge-aligned with data. The 
following list matches the data 
strobe with the data bytes: 
(DQS_7: DQ[63:56] …. 
DQS_0: DQ[7:0]). The data 
strobes may be used in single-
ended mode or paired with 
optional complementary 
signals DQS_B to provide 
differential-pair signaling to 
the system during both reads 
and writes. A control bit at 
EMR(1)[A10] enables or 
disables all complementary 
data strobe signals.
DDR3_0_DQSBECC[0]
I/O
DDR
1
VDDQ
DDR3 ECC Strobe: 
Differential-pair output with 
read-data ECC, differential-
pair input with write-data 
ECC. Edge-aligned with read-
data ECC, centered in write-
data ECC.
DDR3_0_CK[3:0]
O
DDR
4
VDDQ
DDR3 Differential Clock: All 
address and control input 
signals are sampled on the 
crossing of the positive edge 
of CK and negative edge of 
CKB. Output (read) data is 
referenced to the crossings of 
CK and CKB (both directions 
of crossing). 
DDR3_0_CKB[3:0]
O
DDR
4
VDDQ
DDR3 Differential Clock: All 
address and control input 
signals are sampled on the 
crossing of the positive edge 
of CK and negative edge of 
CKB. Output (read) data is 
referenced to the crossings of 
CK and CKB (both directions 
of crossing). 
Table 31-4. DDR0 Signals (Sheet 2 of 5)
Signal Name
I/O 
Type
I/O Buffer 
Type
Ball 
Count
Internal 
Resistor 
PU/PD
External 
Resistor 
PU/PD
Power 
Rail
Description