Philips CGY2014TT Manual De Usuario

2000 Oct 16

4

Philips Semiconductors

Product specification

GSM/DCS/PCS power amplifier

CGY2014TT

n.c.

1

not connected

RFI

HB

2

DCS/PCS power amplifier input

V

DD1HB

3

DCS/PCS first stage supply voltage

V

DD2HB

4

DCS/PCS second stage supply voltage

V

DD2HB

5

DCS/PCS second stage supply voltage

V

DD2LB

6

GSM second stage supply voltage

V

DD1LB

7

GSM first stage supply voltage

GND1

LB

8

GSM first stage ground

RFI

LB

9

GSM power amplifier input

n.c.

10

not connected

n.c.

11

not connected

n.c.

12

not connected

RFO/V

DD3LB

13

GSM power amplifier output and third stage supply voltage

RFO/V

DD3LB

14

GSM power amplifier output and third stage supply voltage

GND

15

ground

n.c.

16

internal connection to ground; pin should not be connected to the board

RFO/V

DD3HB

17

DCS/PCS power amplifier output and third stage supply voltage

RFO/V

DD3HB

18

DCS/PCS power amplifier output and third stage supply voltage

n.c.

19

not connected

n.c.

20

not connected

−

exposed die

ground

The CGY2014TT is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the

“ETS 300 577 specification”, which are

defined as follows:

•

t

on

= 570

µ

s

•

T = 4.16 ms

•

Duty cycle

δ

=

1

/

8

.

Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.

The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.

handbook, halfpage

FCA181

1

2

3

4

5

6

7

8

9

10

n.c.

RFIHB

VDD1HB

VDD2HB

VDD2HB

VDD2LB

VDD1LB

GND1LB

RFILB

n.c.

n.c.

n.c.

RFO/VDD3HB

RFO/VDD3HB

n.c.

GND

RFO/VDD3LB

RFO/VDD3LB

n.c.

n.c.

20

19

18

17

16

15

14

13

12

11

Fig.2  Pin configuration.