Philips CGY2014TT Manual De Usuario
2000 Oct 16
6
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
AC CHARACTERISTICS
V
V
DD
= 3.5 V; T
amb
= 25
°
C; measured on the Philips demoboard (see Fig.8).
Notes
1. The device is adjusted to provide nominal load power into a 50
Ω
load. The device is switched off and a 6 : 1 load
replaces the 50
Ω
load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
2. The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit.
3. Isolation can be improved to
−
20 dBm (typical value) with a pin diode switched in the DCS output matching.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Low band: GSM power amplifier
P
i(LB)
input power
−
2
0
+2
dBm
f
RF(LB)
RF frequency range
880
−
915
MHz
P
o(LB)(max)
maximum output power
see Figs 3 and 4
34.5
35
−
dBm
η
LB
efficiency
see Fig.3
50
55
−
%
P
o(LB)(min)
minimum output power
V
DD
= 0 V; P
i(LB)
= 0 dBm
−
−
35
−
dBm
N
RX(LB)
output noise in RX band
P
i(LB)
= 0 dBm
f
RF
= 925 to 935 MHz
−
−
−
117
dBm/Hz
f
RF
= 935 to 960 MHz
−
−
−
129
dBm/Hz
H2
LB
2nd harmonic level
P
i(LB)
= 0 dBm
−
−
−
35
dBc
H3
LB
3rd harmonic level
P
i(LB)
= 0 dBm
−
−
−
35
dBc
Stab
LB
stability
P
i(LB)
= 0 dBm; note 1
−
−
−
60
dBc
High band: DCS/PCS power amplifier; note 2
P
i(HB)
input power
2
3
5
dBm
f
RF(HB)
RF frequency range
for DCS operation
1710
−
1785
MHz
P
o(HB)(max)
maximum output power
see Figs 5 and 6
32
32.5
−
dBm
η
HB
efficiency
see Fig.5
38
40
−
%
P
o(HB)(min)
minimum output power
V
DD
= 0 V; P
i(HB)
= 3 dBm
−
−
32
−
dBm
α
HB
high band isolation when
low band is operating
low band is operating
V
DD(LB)
= 3.5 V; P
i(LB)
= 0 dBm;
V
DD(HB)
= 0 V; P
i(HB)
= 3 dBm;
note 3
−
0
−
dBm
N
RX(HB)
output noise in RX band
P
i(HB)
= 3 dBm
−
−
−
121
dBm/Hz
H2
HB
2nd harmonic level
P
i(HB)
= 3 dBm
−
−
−
35
dBc
H3
HB
3rd harmonic level
P
i(HB)
= 3 dBm
−
−
−
35
dBc
Stab
HB
stability
P
i(HB)
= 3 dBm; note 1
−
−
−
60
dBc