Renesas HSG2005 Manual De Usuario
Rev.4.00 Jun 21, 2006 page 1 of 12
HSG2005
SiGe HBT
High Frequency Medium Power Amplifier
High Frequency Medium Power Amplifier
REJ03G0485-0400
Rev.4.00
Jun 21, 2006
Features
•
High Transition Frequency
f
f
T
= 28.5 GHz typ.
•
Low Distortion and Excellent Linearity
P1dB at output = +21 dBm typ. f = 5.8 GHz
P1dB at output = +21 dBm typ. f = 5.8 GHz
•
High Collector to Emitter Voltage
V
V
CEO
= 5 V
•
Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
(Package name: HWQFN-8 <TNP-8TV>)
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
1
3
7
6
5
2
4
8
9
1
3
7 6
5
2
4
8
9
2005
Note:
Marking is “2005”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol
Ratings
Unit
Collector to base voltage
V
CBO
12
V
Collector to emitter voltage
V
CEO
5
V
Emitter to base voltage
V
EBO
1.2
V
Collector current
I
C
400 mA
Collector power dissipation
Pc
1.2
Note
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°C
Note: Value on PCB (40 x 40 x 1.0 mm)