Renesas HSG2005 ユーザーズマニュアル

Rev.4.00  Jun 21, 2006  page 1 of 12 

 

 

SiGe HBT 
High Frequency Medium Power Amplifier 

REJ03G0485-0400 

Rev.4.00 

Jun 21, 2006 

• 

High Transition Frequency 
f

T

 = 28.5 GHz typ. 

• 

Low Distortion and Excellent Linearity 
P1dB at output = +21 dBm typ. f = 5.8 GHz 

• 

High Collector to Emitter Voltage 
V

CEO

 = 5 V 

• 

Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. 

 

Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)

1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter

1

3

7

6

5

2

4

8

9

1

3

7 6

5

2

4

8

9

2005

 

Note: 

Marking is “2005”.  

 

Absolute Maximum Ratings  

(Ta = 25°C) 

Collector to base voltage 

V

CBO

 12 

V 

Collector to emitter voltage 

V

CEO

 5 

V 

Emitter to base voltage 

V

EBO

 1.2 

V 

Collector current 

I

C

 400  mA 

Collector power dissipation 

Pc 

     1.2

Note

 W 

Junction temperature 

Tj 

150 

°

C 

Storage temperature 

Tstg 

–55 to +150 

°C 

Note:  Value on PCB (40 x 40 x 1.0 mm)