Philips S1D13505 Manual De Usuario
Page 40
Epson Research and Development
Vancouver Design Center
S1D13505
Hardware Functional Specification
X23A-A-001-14
Issue Date: 01/02/02
Table 6-4: Electrical Characteristics for VDD = 3.3V typical
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
DDS
Quiescent Current
Quiescent Conditions
290
uA
I
IZ
Input Leakage Current
-1
1
µ
A
I
OZ
Output Leakage Current
-1
1
µ
A
V
OH
High Level Output Voltage
VDD = min
I
I
OL
=
-2mA (Type1),
-4mA (Type2)
-6mA (Type3)
-4mA (Type2)
-6mA (Type3)
V
DD
- 0.3
V
V
OL
Low Level Output Voltage
VDD = min
I
I
OL
=
2mA (Type1),
4mA (Type2)
6mA (Type3)
4mA (Type2)
6mA (Type3)
0.3
V
V
IH
High Level Input Voltage
CMOS level, V
DD
= max
2.2
V
V
IL
Low Level Input Voltage
CMOS level, V
DD
= min
0.8
V
V
T+
High Level Input Voltage
CMOS Schmitt,
V
V
DD
= 3.3V
2.4
V
V
T-
Low Level Input Voltage
CMOS Schmitt,
V
V
DD
= 3.3V
0.6
V
V
H1
Hysteresis Voltage
CMOS Schmitt,
V
V
DD
= 3.3V
0.1
V
R
PD
Pull Down Resistance
V
I
= V
DD
90
180
360
k
Ω
C
I
Input Pin Capacitance
12
pF
C
O
Output Pin Capacitance
12
pF
C
IO
Bi-Directional Pin Capacitance
12
pF