Philips S1D13505 Manual De Usuario
Epson Research and Development
Page 41
Vancouver Design Center
Hardware Functional Specification
S1D13505
Issue Date: 01/02/02
X23A-A-001-14
Table 6-5: Electrical Characteristics for VDD = 3.0V typical
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
DDS
Quiescent Current
Quiescent Conditions
260
uA
I
IZ
Input Leakage Current
-1
1
µ
A
I
OZ
Output Leakage Current
-1
1
µ
A
V
OH
High Level Output Voltage
VDD = min
I
I
OL
=
-1.8mA (Type1),
-3.5mA (Type2)
-5mA (Type3)
-3.5mA (Type2)
-5mA (Type3)
V
DD
- 0.3
V
V
OL
Low Level Output Voltage
VDD = min
I
I
OL
=
1.8mA (Type1),
3.5mA (Type2)
5mA (Type3)
3.5mA (Type2)
5mA (Type3)
0.3
V
V
IH
High Level Input Voltage
CMOS level, V
DD
= max
2.0
V
V
IL
Low Level Input Voltage
CMOS level, V
DD
= min
0.8
V
V
T+
High Level Input Voltage
CMOS Schmitt,
V
V
DD
= 3.0V
2.3
V
V
T-
Low Level Input Voltage
CMOS Schmitt,
V
V
DD
= 3.0V
0.5
V
V
H1
Hysteresis Voltage
CMOS Schmitt,
V
V
DD
= 3.0V
0.1
V
R
PD
Pull Down Resistance
V
I
= V
DD
100
200
400
k
Ω
C
I
Input Pin Capacitance
12
pF
C
O
Output Pin Capacitance
12
pF
C
IO
Bi-Directional Pin Capacitance
12
pF