Cypress CY62167DV18 Manual De Usuario
CY62167DV18 MoBL
®
Document #: 38-05326 Rev. *C
Page 5 of 11
Switching Characteristics
(Over the Operating Range)
Parameter
Description
55 ns
Unit
Min
Max
Read Cycle
t
t
RC
Read Cycle Time
55
ns
t
AA
Address to Data Valid
55
ns
t
OHA
Data Hold from Address Change
10
ns
t
ACE
CE
1
LOW and CE
2
HIGH to Data Valid
55
ns
t
DOE
OE LOW to Data Valid
25
ns
t
LZOE
OE LOW to LOW Z
5
ns
t
HZOE
OE HIGH to High Z
20
ns
t
LZCE
CE
1
LOW and CE
2
HIGH to Low Z
10
ns
t
HZCE
CE
1
HIGH and CE
2
LOW to High Z
20
ns
t
PU
CE
1
LOW and CE
2
HIGH to Power up
0
ns
t
PD
CE
1
HIGH and CE
2
LOW to Power down
55
ns
t
DBE
BLE/BHE LOW to Data Valid
55
ns
t
LZBE
BLE/BHE LOW to Low Z
5
ns
t
HZBE
BLE/BHE HIGH to HIGH Z
20
ns
Write Cycle
t
WC
Write Cycle Time
55
ns
t
SCE
CE
1
LOW and CE
2
HIGH
to Write End
40
ns
t
AW
Address Setup to Write End
40
ns
t
HA
Address Hold from Write End
0
ns
t
SA
Address Setup to Write Start
0
ns
t
PWE
WE Pulse Width
40
ns
t
BW
BLE/BHE LOW to Write End
45
ns
t
SD
Data Setup to Write End
25
ns
t
HD
Data Hold from Write End
0
ns
t
HZWE
WE LOW to High-
20
ns
t
LZWE
WE HIGH to Low-Z
10
ns
Notes
10. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of V
CC(typ)
/2, input pulse levels
of 0 to V
CC(typ)
, and output loading of the specified I
OL
/I
OH
.
11. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any
given device.
12. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high impedance state.
13. The internal write time of the memory is defined by the overlap of WE, CE
1
= V
IL
, BHE, BLE or both = V
IL
, and CE
2
= V
IH
. All signals must be ACTIVE to initiate
a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.