Samsung M378T5663EH3-CE6 Manual De Usuario
Rev. 1.02 October 2008
UDIMM
DDR2 SDRAM
19 of 25
(V
DD
=1.8V, V
DDQ
=1.8V, T
A
=25
o
C)
Note : DM is internally loaded to match DQ and DQS identically.
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Units
Non-ECC
M378T2863EHS
M378T5663EH3
M378T6464EHS
Input capacitance, CK and CK
CCK0
-
24
-
26
-
22
pF
CCK1
-
25
-
28
-
24
CCK2
-
25
-
28
-
24
Input capacitance, CKE and CS
CI1
-
42
-
42
-
34
Input capacitance, Addr, RAS, CAS, WE
CI2
-
42
-
42
-
34
Input/output capacitance, DQ, DM, DQS, DQS
CIO
-
6
-
10
-
6
ECC
M391T2863EH3
M391T5663EH3
Units
Input capacitance, CK and CK
CCK0
-
25
-
28
pF
CCK1
-
25
-
28
CCK2
-
25
-
28
Input capacitance, CKE and CS
CI
1
-
44
-
44
Input capacitance, Addr, RAS, CAS, WE
CI
2
-
44
-
44
Input/output capacitance, DQ, DM, DQS, DQS
CIO
-
6
-
10
Parameter
Symbol
256Mb
512Mb
1Gb
2Gb
4Gb
Units
Refresh to active/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval
tREFI
0
°C ≤ T
CASE
≤ 85°C
7.8
7.8
7.8
7.8
7.8
µs
85
°C < T
CASE
≤ 95°C
3.9
3.9
3.9
3.9
3.9
µs
(0
°C < T
OPER
< 95
°C; V
DDQ
= 1.8V + 0.1V; V
DD
= 1.8V + 0.1V)
14.1 Refresh Parameters by Device Density
Speed
DDR2-800(E7)
DDR2-800(F7)
DDR2-667(E6)
Units
Bin
(CL - tRCD - tRP)
5 - 5 - 5
6 - 6- 6
5 - 5 - 5
Parameter
min
max
min
max
min
max
tCK, CL=3
5
8
-
-
5
8
ns
tCK, CL=4
3.75
8
3.75
8
3.75
8
ns
tCK, CL=5
2.5
8
3
8
3
8
ns
tCK, CL=6
-
-
2.5
8
-
-
ns
tRCD
12.5
-
15
-
15
-
ns
tRP
12.5
-
15
-
15
-
ns
tRC
57.5
-
60
-
60
-
ns
tRAS
45
70000
45
70000
45
70000
ns
14.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
14.0 Electrical Characteristics & AC Timing for DDR2-800/667
13.0 Input/Output Capacitance