Samsung M378T5663EH3-CE6 Manual De Usuario

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Rev. 1.02 October 2008
UDIMM
DDR2 SDRAM
 21 of 25
Parameter
Symbol
DDR2-800
DDR2-667
Units
Notes
min
max
min
max
Four Activate Window for 1KB page size products
tFAW
35
x
37.5
x
ns
32
Four Activate Window for 2KB page size products
tFAW
45
x
50
x
ns
32
CAS to CAS command delay
tCCD
2
x
2
x
nCK
Write recovery time
tWR
15
x
15
x
ns
32
Auto precharge write recovery + precharge time
tDAL
WR + tnRP
x
WR + tnRP
x
nCK
33
Internal write to read command delay
tWTR
7.5
x
7.5
x
ns
24,32
Internal read to precharge command delay
tRTP
7.5
x
7.5
x
ns
3,32
Exit self refresh to a non-read command
tXSNR
tRFC + 10
x
tRFC + 10
x
ns
32
Exit self refresh to a read command
tXSRD
200
x
200
x
nCK
Exit precharge power down to any command
tXP
2
x
2
x
nCK
Exit active power down to read command
tXARD
2
x
2
x
nCK
1
Exit active power down to read command
(slow exit, lower power)
tXARDS
8 - AL
x
7 - AL
x
nCK
1,2
CKE minimum pulse width (HIGH and LOW pulse width)
tCKE
3
x
3
x
nCK
27
ODT  turn-on  delay
tAOND
2
2
2
2
nCK
16
ODT turn-on 
tAON
tAC(min)
tAC(max)+0.7
tAC(min)
tAC(max)+0.7
ns
6,16,40
ODT turn-on (Power-Down mode)
tAONPD
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
ns
ODT turn-off delay
tAOFD
2.5
2.5
2.5
2.5
nCK
17,45
ODT turn-off
tAOF
tAC(min)
tAC(max)+0.6
tAC(min)
tAC(max)+0.6
ns
17,43,45
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)+2
2.5*tCK(avg)
+tAC(max)+1
tAC(min)+2
2.5*tCK(avg)
+tAC(max)+1
ns
ODT to power down entry latency
tANPD
3
x
3
x
nCK
ODT power down exit latency
tAXPD
8
x
8
x
nCK
OCD drive mode output delay
tOIT
0
12
0
12
ns
32
Minimum time clocks remains ON after CKE asynchronously
drops LOW
tDelay
tIS+tCK(avg)
+tIH
x
tIS+tCK(avg)
+tIH
x
ns
15