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Electrical characteristics
L6227
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DocID9453 Rev 2
4 Electrical 
characteristics
Table 5. Electrical characteristics 
(T
amb
 = 25 °C, V
s
 = 48 V, unless otherwise specified)
Symbol
Parameter Test 
conditions
Min.
Typ. Max. Unit
V
Sth(ON)
Turn-on threshold
5.8
6.3
6.8
V
V
Sth(OFF)
Turn-off threshold
5
5.5
6
V
I
S
Quiescent supply current
All bridges OFF;
T
j
 = -25 °C to 125 °C
(1)
5
10
mA
T
j(OFF)
Thermal shutdown temperature
165
C
Output DMOS transistors
R
DS(ON)
High-side + low-side switch ON 
resistance
T
j
 = 25 °C
1.47
1.69
W
T
j
 = 125 °C
2.35
2.7
W
I
DSS
Leakage current
EN = low; OUT = V
S
2
mA
EN = low; OUT = GND
-0.3
mA
Source drain diodes
V
SD
Forward ON voltage
I
SD
 = 1.4 A, EN = LOW
1.15
1.3
V
t
rr
Reverse recovery time
I
f
 = 1.4 A
300
ns
t
fr
Forward recovery time
200
ns
Logic input
V
IL
Low level logic input voltage
-0.3
0.8
V
V
IH
High level logic input voltage
2
7
V
I
IL
Low level logic input current
GND logic input voltage
-10
µA
I
IH
High level logic input current
7 V logic input voltage
10
µA
V
th(ON)
Turn-on input threshold
1.8
2.0
V
V
th(OFF)
Turn-off input threshold
0.8
1.3
V
V
th(HYS)
Input threshold hysteresis
0.25
0.5
V
Switching characteristics
t
D(on)EN
Enable to out turn ON delay time
(2)
I
LOAD 
=1.4 A, resistive load
500
800
ns 
t
D(on)IN
Input to out turn ON delay time
I
LOAD 
=1.4 A, resistive load
(deadtime included)
1.9
µs
t
RISE
Output rise time
I
LOAD 
= 1.4 A, resistive load
40
250
ns 
t
D(off)EN
Enable to out turn OFF delay time
I
LOAD 
= 1.4 A, resistive load
500
800
1000
ns 
t
D(off)IN
Input to out turn OFF delay time
I
LOAD 
= 1.4 A, resistive load
500
800
1000
ns
t
FALL
Output fall time
I
LOAD 
= 1.4 A, resistive load
40
250
ns
t
dt
Deadtime protection
0.5
1
µs
f
CP
Charge pump frequency
 
-25 °C <T
j
 < 125 °C
0.6
1
MHz