Infineon Technologies NF transistor BDP 947 NPN Case type SOT 223 BDP947 Hoja De Datos
Los códigos de productos
BDP947
2011-10-05
4
BDP947_BDP949_BDP953
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 2 V
10
0
10
1
10
2
10
3
10
4
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
-55°C
25°C
100°C
Collector-emitter saturation voltage
I
I
C
=
ƒ(V
CEsat
), h
FE
= 10
0
0.1
0.2
0.3
0.4
V
0.6
V
CEsat
0
10
1
10
2
10
3
10
4
10
mA
I
C
100°C
25°C
-50°C
25°C
-50°C
Base-emitter saturation voltage
I
I
C
= (V
BEsat
), h
FE
= 10
0
0.2
0.4
0.6
0.8
1
V
1.3
V
BEsat
0
10
1
10
2
10
3
10
4
10
mA
I
C
-50°C
25°C
100°C
25°C
100°C
Collector current
I
C
=
ƒ(V
BE
)
V
CE
= 2 V
0
0.2
0.4
0.6
0.8
1
V
1.3
V
BE
0
10
1
10
2
10
3
10
4
10
mA
I
C
-50°C
25°C
100°C
25°C
100°C