Infineon Technologies NF transistor BDP 947 NPN Case type SOT 223 BDP947 Hoja De Datos
Los códigos de productos
BDP947
2011-10-05
5
BDP947_BDP949_BDP953
Collector cutoff current
I
CBO
=
ƒ(T
A
)
V
CB
= 45 V
0
20
40
60
80
100
120
°C
150
T
A
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
nA
I
CB0
max
typ
Collector-base capacitance
C
cb
=
ƒ(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ(V
EB
)
0
4
8
12
16
V
22
V
CB
(V
EB
0
50
100
150
200
250
300
350
400
pF
500
C
CB
(C
EB
)
CCB
CEB
Total power dissipation
P
tot
=
ƒ(T
S
)
0
15
30
45
60
75
90 105 120
°C
150
t
s
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
W
5.5
P
to
t
Permissible Pulse Load
R
thJS
=
ƒ(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
R
thJ
S
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0,2
0,1
0,05
0,02
0,01
0,005
0