Nxp Semiconductors BU2523DF BU Transistor NPN SOT 199 11A 800V BU2523DF Hoja De Datos
Los códigos de productos
BU2523DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 6.0 V; I
C
= 0 A
80
130
170
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
800
-
-
V
L = 25 mH
R
be
Base-emitter resistance
V
EB
= 7.5 V
-
46
-
Ω
V
CEsat
Collector-emitter saturation voltage
I
C
= 5.5 A; I
B
= 1.1 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 5.5 A; I
B
= 1.1 A
-
-
1.0
V
h
FE
DC current gain
I
C
= 1.0 A; V
CE
= 5 V
-
12
-
h
FE
I
C
= 5.5 A; V
CE
= 5 V
5
7.5
10.8
V
F
Diode forward voltage
I
F
= 5.5 A
-
-
2.2
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (64 kHz line
I
Csat
= 5.5 A; L
C
= 200
µ
H; C
fb
= 4 nF;
deflection circuit)
V
CC
= 145 V; I
B(end)
= 0.56 A;
L
B
= 0.4
µ
H; -V
BB
= -4 V;
-I
BM
= 3.3 A
t
s
Turn-off storage time
1.5
2
µ
s
t
f
Turn-off fall time
0.15
0.3
µ
s
V
fr
Anti-parallel diode forward recovery
I
F
= 5.5 A; dI
F
/dt = 50 A/
µ
s
16.5
-
V
voltage
t
fr
Anti-parallel diode forward recovery
V
F
= 5 V
375
-
ns
time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200