Cypress CY7C1347G Manuel D’Utilisation
CY7C1347G
Document #: 38-05516 Rev. *F
Page 9 of 22
Maximum Ratings
Exceeding the maximum ratings may shorten the battery life of
the device. User guidelines are not tested.
the device. User guidelines are not tested.
Storage Temperature
..................................... −65°C to +150°C
Ambient Temperature with
Power Applied
Power Applied
.................................................. −55°C to +125°C
Supply Voltage on V
DD
Relative to GND
.........−0.5V to +4.6V
Supply Voltage on V
DDQ
Relative to GND
........−0.5V to +V
DD
DC Voltage Applied to Outputs
in High-Z State
in High-Z State
........................................... −0.5V to V
DD
+ 0.5V
DC Input Voltage
....................................... −0.5V to V
DD
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
(MIL-STD-883, Method 3015)
Latch-Up Current ................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial
0°C to +70°C
3.3V
−5%/+10%
2.5V
−5%
to V
DD
Industrial
–40°C to +85°C
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Max
Unit
V
DD
Power Supply Voltage
3.135
3.6
V
V
DDQ
IO Supply Voltage
2.375
V
DD
V
V
OH
Output HIGH Voltage
For 3.3V IO, I
OH
= –4.0 mA
2.4
V
For 2.5V IO, I
OH
= –1.0 mA
2.0
V
V
OL
Output LOW Voltage
For 3.3V IO, I
OL
= 8.0 mA
0.4
V
For 2.5V IO, I
OL
= 1.0 mA
0.4
V
V
IH
Input HIGH Voltage
For 3.3V IO
2.0
V
DD
+ 0.3V
V
For 2.5V IO
1.7
V
DD
+ 0.3V
V
V
IL
Input LOW Voltage
For 3.3V IO
–0.3
0.8
V
For 2.5V IO
–0.3
0.7
V
I
X
Input Leakage Current
Except ZZ and MODE
Except ZZ and MODE
GND < V
I
< V
DDQ
−5
5
μA
Input Current of MODE
Input = V
SS
−30
μA
Input = V
DD
5
μA
Input Current of ZZ
Input = V
SS
−5
μA
Input = V
DD
30
μA
I
OZ
Output Leakage Current
GND
≤ V
I
≤ V
DDQ,
Output Disabled
−5
5
μA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
4 ns cycle, 250 MHz
325
mA
5 ns cycle, 200 MHz
265
mA
6 ns cycle, 166 MHz
240
mA
7.5 ns cycle, 133 MHz
225
mA
I
SB1
Automatic CE
Power Down
Current—TTL Inputs
Power Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
f = f
MAX
= 1/t
CYC
4 ns cycle, 250 MHz
120
mA
5 ns cycle, 200 MHz
110
mA
6 ns cycle, 166 MHz
100
mA
7.5 ns cycle, 133 MHz
90
mA
I
SB2
Automatic CE
Power Down
Current—CMOS Inputs
Power Down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
< 0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
All speeds
40
mA
Notes
8. Overshoot: V
IH
(AC) < V
DD
+1.5V (pulse width less than t
CYC
/2). Undershoot: V
IL
(AC) > –2V (pulse width less than t
CYC
/2).
9. T
Power up
: assumes a linear ramp from 0V to V
DD
(min) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.