On Semiconductor NCV8873 Evaluation Board NCV8873LEDBSTGEVB NCV8873LEDBSTGEVB Fiche De Données
Codes de produits
NCV8873LEDBSTGEVB
NCV8873
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 3.2 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Unit
Max
Typ
Min
Conditions
Symbol
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
g
m,vea
V
FB
– V
ref
= ± 20 mV
0.8
1.2
1.5
mS
VEA output resistance
R
o,vea
2.0
−
−
MW
VFB input bias current
I
vfb,bias
Current out of VFB pin
−
0.5
2.0
mA
Reference voltage
V
ref
0.194
0.200
0.206
V
VEA maximum output voltage
V
c,max
2.5
−
−
V
VEA minimum output voltage
V
c,min
−
−
0.3
V
VEA sourcing current
I
src,vea
VEA output current, Vc = 2.0 V
80
100
−
mA
VEA sinking current
I
snk,vea
VEA output current, Vc = 0.7 V
80
100
−
mA
GATE DRIVER
Sourcing current
I
src
V
DRV
≥ 6 V, V
DRV
− V
GDRV
= 2 V
YY = 00
600
800
−
mA
Sinking current
I
sink
V
GDRV
≥ 2 V
YY = 00
500
600
−
mA
Driving voltage dropout
V
drv,do
V
IN
− V
DRV
, Iv
DRV
= 25 mA
−
0.3
0.6
V
Driving voltage source current
I
drv
V
IN
− V
DRV
= 1 V
35
45
−
mA
Backdrive diode voltage drop
V
d,bd
V
DRV
− V
IN
, I
d,bd
= 5 mA
−
−
0.7
V
Driving voltage
V
DRV
I
VDRV
= 0.1 − 25 mA
YY = 00
6.0
6.3
6.6
V
UVLO
Undervoltage lock−out,
Threshold voltage
V
uvlo
V
IN
falling
2.95
3.05
3.15
V
Undervoltage lock−out,
Hysteresis
V
uvlo,hys
V
IN
rising
50
150
250
mV
THERMAL SHUTDOWN
Thermal shutdown threshold
T
sd
T
J
rising
160
170
180
°C
Thermal shutdown hysteresis
T
sd,hys
T
J
falling
10
15
20
°C
Thermal shutdown delay
t
sd,dly
From T
J
> T
sd
to stop switching
−
−
100
ns