On Semiconductor NCP3065 Evaluation Boards NCP3065SOBCKGEVB and NCP3065SOBSTGEVB NCP3065SOBCKGEVB NCP3065SOBCKGEVB Fiche De Données
Codes de produits
NCP3065SOBCKGEVB
NCP3065, NCV3065
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0 V, T
J
= −40°C to +125°C, unless otherwise specified)
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
OSCILLATOR
Frequency
(VPin 5 = 0 V, CT = 2.2 nF,
T
J
= 25°C)
f
OSC
110
150
190
kHz
Discharge to Charge Current Ratio
(Pin 7 to V
CC
, T
J
= 25°C)
I
DISCHG
/
I
CHG
5.5
6.0
6.5
−
Capacitor Discharging Current
(Pin 7 to V
CC
, T
J
= 25°C)
I
DISCHG
1650
mA
Capacitor Charging Current
(Pin 7 to V
CC
, T
J
= 25°C)
I
CHG
275
mA
Current Limit Sense Voltage
(T
J
= 25°C) (Note 6)
V
IPK(Sense)
165
185
235
mV
OUTPUT SWITCH (Note 5)
Darlington Switch Collector to
Emitter Voltage Drop
(I
SW
= 1.0 A,
T
J
= 25°C) (Note 5)
V
SWCE(DROP)
1.0
1.3
V
Collector Off−State Current
(V
CE
= 40 V)
I
C(OFF)
0.01
100
mA
COMPARATOR
Threshold Voltage
T
J
= 25°C
V
TH
235
mV
T
J
= 0 to +85°C
±5
%
T
J
= −40°C to +125°C
V
TH
−10
+10
%
Threshold Voltage Line Regulation
(V
CC
= 3.0 V to 40 V)
REG
LiNE
−6.0
6.0
mV
Input Bias Current
(V
in
= V
th
)
I
CII in
−1000
−100
1000
nA
TOTAL DEVICE
Supply Current
(V
CC
= 5.0 V to 40 V,
CT = 2.2 nF, Pin 7 = V
CC
,
VPin 5 > V
th
, Pin 2 = GND,
remaining pins open)
I
CC
7.0
mA
Thermal Shutdown Threshold
160
°C
Hysteresis
10
°C
5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.
6. The
6. The
V
IPK(Sense)
Current Limit Sense Voltage is specified at static conditions. In dynamic operation the sensed current turn−off value depends
on comparator response time and di/dt current slope. See the Operating Description section for details.
7. NCV prefix is for automotive and other applications requiring site and change control.