Nxp Semiconductors BU2508AW BU Transistor NPN SOT 429 (TO 247) 8A 700V BU2508AW Fiche De Données
Codes de produits
BU2508AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.12 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.7 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 100 mA;V
CE
= 5 V
-
13
-
h
FE
I
C
= 4.5 A;V
CE
= 1 V
4
5.5
7.0
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
80
-
pF
Switching times (16 kHz line
I
Csat
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
µ
H;
deflection circuit)
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
µ
s)
t
s
Turn-off storage time
5.0
6.0
µ
s
t
f
Turn-off fall time
0.4
0.6
µ
s
Switching times (38 kHz line
I
Csat
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
µ
H;
deflection circuit)
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
µ
s)
t
s
Turn-off storage time
4.7
5.7
µ
s
t
f
Turn-off fall time
0.25
0.35
µ
s
Fig.1. Test circuit for V
CEO
sust.
Fig.2. Oscilloscope display for V
CEO
sust.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100