Lenovo Intel Xeon E5520 67Y0011 Manuale Utente

Thermal/Mechanical Design Guide

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Design, including materials, shall be consistent with the manufacture of units that meet 
the following environmental reference points.

The reliability targets in this chapter are based on the expected field use environment 
for these products. The test sequence for new sockets will be developed using the 
knowledge-based reliability evaluation methodology, which is acceleration factor 
dependent. A simplified process flow of this methodology can be seen in 

Mated loop inductance, Loop

<3.9nH

The inductance calculated for two contacts, 

considering one forward conductor and one return 

conductor. These values must be satisfied at the 

worst-case height of the socket.

Mated partial mutual inductance, L 

NA

The inductance on a contact due to any single 

neighboring contact.

Maximum mutual capacitance, C.

<1 pF 

The capacitance between two contacts

Socket Average Contact Resistance 

(EOL)

15.2 mΩ

The socket average contact resistance target is 

derived from average of every chain contact 

resistance for each part used in testing, with a 

chain contact resistance defined as the resistance 

of each chain minus resistance of shorting bars 

divided by number of lands in the daisy chain. 
The specification listed is at room temperature 

and has to be satisfied at all time. 
Socket Contact Resistance: The resistance of 

the socket contact, solderball, and interface 

resistance to the interposer land.

Max Individual Contact Resistance 

(EOL)

≤

 

100 mΩ

The specification listed is at room temperature 

and has to be satisfied at all time. 
Socket Contact Resistance: The resistance of 

the socket contact, solderball, and interface 

resistance to the interposer land; gaps included.

Bulk Resistance Increase 

≤

 

3 mΩ

The bulk resistance increase per contact from 

24 °C to 107 °C 

Dielectric Withstand Voltage

360 Volts RMS

Insulation Resistance

800 MΩ