Intel D525 AU80610006225AA Manuale Utente

Datasheet

9

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DDR2 (D410, D510, D425, and D525) 

— One channel of DDR2 memory (consists of 64 data lines):

„

Maximum of two DIMMs per channel, containing single or double-sided DIMM

— Memory DDR2 data transfer rates of 667 and 800 MT/s

— Only non-ECC DIMMs are supported

— Support unbuffered DIMMs

— I/O Voltage of 1.8V for DDR2

— Supports 512-Mb, 1-Gb & 2-Gb technologies for DDR2

— Support 4 banks for 512 Mbit densities for DDR2

— Support 8 banks for 1-Gb and 2-Gb densities for DDR2

— Support 2 DIMMs, 4 GB (assuming 2-Gb density device technology) maximum

— Support up to 32 simultaneous open pages per channel (assuming 4 ranks of 

8i devices)

— Support Partial Writes to memory using Data Mask signals (DM)

— Enhances Address Mapping

— Support DIMM page size of 4KB and 8KB

— Support data burst length of 8 for all memory configurations

— Support memory thermal management scheme to selectively manage reads 

and/or writes. Memory thermal management can be triggered by either on-die 
thermal sensor, or by preset limits. Management limits are determined by 
weighted sum of various commands that are scheduled on the memory 
interface.

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DDR3 SO-DIMM only (D525 and D425)

— Support for DDR3 at data transfer rate of 800 MT/s only

— One channel of DDR3 memory (consists of 64-bit data lines); maximum of 

2 SO-DIMMs in Raw Card A or Raw Card B format

— I/O Voltage of 1.5 V for DDR3

— Maximum of 4GB memory capacity supported

— Memory organizations supported (refer to Platform Design Guide for more 

details)

2 SO-DIMM

1 SO-DIMM