Intel D525 AU80610006225AA Manual De Usuario
Los códigos de productos
AU80610006225AA
Datasheet
9
Introduction
1.2
System Memory Features
•
DDR2 (D410, D510, D425, and D525)
— One channel of DDR2 memory (consists of 64 data lines):
Maximum of two DIMMs per channel, containing single or double-sided DIMM
— Memory DDR2 data transfer rates of 667 and 800 MT/s
— Only non-ECC DIMMs are supported
— Support unbuffered DIMMs
— I/O Voltage of 1.8V for DDR2
— Supports 512-Mb, 1-Gb & 2-Gb technologies for DDR2
— Support 4 banks for 512 Mbit densities for DDR2
— Support 8 banks for 1-Gb and 2-Gb densities for DDR2
— Support 2 DIMMs, 4 GB (assuming 2-Gb density device technology) maximum
— Support up to 32 simultaneous open pages per channel (assuming 4 ranks of
8i devices)
— Support Partial Writes to memory using Data Mask signals (DM)
— Enhances Address Mapping
— Support DIMM page size of 4KB and 8KB
— Support data burst length of 8 for all memory configurations
— Support memory thermal management scheme to selectively manage reads
and/or writes. Memory thermal management can be triggered by either on-die
thermal sensor, or by preset limits. Management limits are determined by
weighted sum of various commands that are scheduled on the memory
interface.
thermal sensor, or by preset limits. Management limits are determined by
weighted sum of various commands that are scheduled on the memory
interface.
•
DDR3 SO-DIMM only (D525 and D425)
— Support for DDR3 at data transfer rate of 800 MT/s only
— One channel of DDR3 memory (consists of 64-bit data lines); maximum of
2 SO-DIMMs in Raw Card A or Raw Card B format
— I/O Voltage of 1.5 V for DDR3
— Maximum of 4GB memory capacity supported
— Memory organizations supported (refer to Platform Design Guide for more
details)
2 SO-DIMM
1 SO-DIMM