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Electrical Specifications
26
Dual-Core Intel
® 
Xeon
® 
Processor 5100 Series Datasheet
accepting an input of the appropriate voltage. Similar considerations must be made for 
TCK, TMS, TDO, and TRST#. Two copies of each signal may be required with each 
driving a different voltage level. 
2.10
Platform Environmental Control Interface (PECI) 
DC Specifications
The release of the Dual-Core Intel
® 
Xeon
® 
Processor 5100 Series marks the transition 
from thermal diodes to digital thermal sensors for fan speed control. Digital Thermal 
Sensors (DTS) are on-die, analog-to-digital temperature converters calibrated at the 
factory for reasonable accuracy to provide a digital representation of relative processor 
temperature. Data from the DTS are processed and stored in a processor register, 
which is queried through the Platform Environment Control Interface (PECI). PECI is a 
proprietary one-wire bus interface that provides a communication channel between 
Intel processor and chipset components to external thermal monitoring devices. More 
detailed information may be found in 
2.10.1
DC Characteristics
A PECI device interface operates at a nominal voltage set by V
TT
. The set of DC 
 is used with devices normally operating 
from a V
TT
 interface supply. V
TT
 nominal levels will vary between processor families. All 
PECI devices will operate at the V
TT
 level determined by the processor installed in the 
system. For specific nominal V
TT
 levels, refer to the appropriate processor EMTS.
Note:
1.
V
TT 
supplies the PECI interface. PECI behavior does not affect V
TT
 min/max specifications.
2.
The leakage specification applies to powered devices on the PECI bus.
Table 2-11.  PECI DC Electrical Limits 
Symbol
Definition and Conditions
Min
Max
Units
Notes
1
V
in
Input Voltage Range
-0.150
V
TT
 + 0.150
V
V
hysteresis
Hysteresis
0.1 * V
TT
N/A
V
V
n
Negative-edge threshold 
voltage
0.275 * V
TT
0.500 * V
TT
V
V
p
Positive-edge threshold 
voltage
0.550 * V
TT
0.725 * V
TT
V
I
source
High level output source
(V
OH
 = 0.75 * V
TT
)
-6.0
N/A
mA
I
sink
Low level output sink
(V
OL
 = 0.25 * V
TT
)
0.5
1.0
mA
I
leak+
High impedance state 
leakage to V
TT
 
(V
leak
 = V
OL
N/A
50
µA
2
I
leak-
High impedance leakage 
to GND 
(V
leak
 = V
OH
)
N/A
10
µA
2
C
bus
Bus capacitance
N/A
10
pF
V
noise
Signal noise immunity 
above 300 MHz
0.1 * V
TT
N/A
V
p-p