Fujifilm Xeon 5060 S26361-F3318-L320 Scheda Tecnica

Dual-Core Intel

® 

Xeon

® 

Processor 5100 Series Datasheet

35

1.

Unless otherwise noted, all specifications in this table apply to all processor frequencies.

2.

The V

TT

 referred to in these specifications refers to instantaneous V

TT

.

3.

Refer to the processor I/O Buffer Models for I/V characteristics.

4.

Measured at 0.1*V

TT

.

5.

Measured at 0.9*V

TT

.

6.

For Vin between 0 V and V

TT

. Measured when the driver is tristated.

1.

Unless otherwise noted, all specifications in this table apply to all processor frequencies.

2.

Measured at 0.2*V

TT

.

3.

V

OH

 is determined by value of the external pullup resistor to V

TT

. Refer to platform design guide for details.

4.

For V

IN

 between 0 V and V

OH

.

The Dual-Core Intel

® 

Xeon

® 

Processor 5100 Series can tolerate short transient 

overshoot events where V

CC

 exceeds the VID voltage when transitioning from a high-

to-low current load condition. This overshoot cannot exceed VID + V

OS_MAX

 (V

OS_MAX

 is 

the maximum allowable overshoot above VID). These specifications apply to the 
processor die voltage as measured across the VCC_DIE_SENSE and VSS_DIE_SENSE 
lands and across the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands.

V

OH

Output High Voltage

0.9*V

TT

V

TT

V

TT

+0.1

V

2

I

OL

Output Low Current

1.70

N/A

4.70

mA

4

I

OH

Output High Current

1.70

N/A

4.70

mA

5

I

LI

Input Leakage Current

N/A

N/A

± 100

μA

6

V

OL

Output Low Voltage

0

N/A

0.20

V

V

OH

Output High Voltage

0.95 * V

TT

V

TT

1.05 * V

TT

V

3

I

OL

Output Low Current

16

N/A

50

mA

2

I

LO

Leakage Current

N/A

N/A

± 200

μA

4

V

OS_MAX

Magnitude of V

CC

 overshoot above VID

50

mV

T

OS_MAX

Time duration of V

CC

 overshoot above VID

25

µs