STMicroelectronics M24C64-WBN6P Memory IC M24C64-WBN6P Scheda Tecnica
Codici prodotto
M24C64-WBN6P
DocID16891 Rev 28
M24C64-W M24C64-R M24C64-F
41
Table 11. Cycling performance by groups of four bytes
Symbol
Parameter
Test condition
(1)
1. Cycling performance for products identified by process letter K.
Max.
Unit
Ncycle
Write cycle
endurance
(2)
2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,
4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and
qualification.
T
A
25 °C, V
CC
(min) < V
CC
< V
CC
(max)
4,000,000
Write cycle
(3)
3. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to
.
T
A
= 85 °C, V
CC
(min) < V
CC
< V
CC
(max)
1,200,000
Table 12. Memory cell data retention
Parameter
Test condition
Min.
Unit
Data retention
(1)
1. For products identified by process letter K. The data retention behavior is checked in production, while the
200-year limit is defined from characterization and qualification results.
T
A
= 55 °C
200
Year