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PIC16(L)F1946/47
DS41414D-page 398
 2010-2012 Microchip Technology Inc.
Power-down Base Current (I
PD
)
(2)
D028
0.1
5.0
8.0
A
1.8
A/D Current (
Note 1, Note 3
), no 
conversion in progress
0.1
6.0
9.0
A
3.0
D028
22
56
63
A
1.8
A/D Current (
Note 1, Note 3
), no 
conversion in progress
26
58
78
A
3.0
27
61
88
A
5.0
D029
250
A
1.8
A/D Current (
Note 1, Note 3
)
conversion in progress
250
A
3.0
D029
280
A
1.8
A/D Current (
Note 1, Note 3, 
Note 4
), conversion in progress
280
A
3.0
280
A
5.0
D030
1
A
3.0
LCD Bias Ladder, Low-power
10
A
3.0
LCD Bias Ladder, Medium-power
75
A
3.0
LCD Bias Ladder, High-power
D030
1
A
5.0
LCD Bias Ladder, Low-power
10
A
5.0
LCD Bias Ladder, Medium-power
75
A
5.0
LCD Bias Ladder, High-power
D031
7.6
22
25
A
1.8
Comparator, Low-Power mode
8.0
23
27
A
3.0
D031
24
55
65
A
1.8
Comparator, Low-Power mode
26
58
80
A
3.0
28
60
90
A
5.0
D032A*
2.0
A
1.8
Cap Sense, Low-Power mode,
CPSRM=0
3.0
A
3.0
D032A*
23
A
1.8
Cap Sense, Low-Power mode,
CPSRM=0
28
A
3.0
30
A
5.0
30.3
DC Characteristics: PIC16(L)F1946/47-I/E (Power-Down) (Continued)
PIC16LF1946/47
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C 
 T
A
 
 +85°C for industrial
-40°C 
 T
A
 
 +125°C for extended
PIC16F1946/47
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C 
 T
A
 
 +85°C for industrial
-40°C 
 T
A
 
 +125°C for extended
Param
No.
Device Characteristics
Min.
Typ†
Max.
+85°C
Max.
+125°C
Units
Conditions
V
DD
Note
*
These parameters are characterized but not tested.
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are 
not tested.
Note 1:
The peripheral current is the sum of the base I
DD
 or I
PD
 and the additional current consumed when this peripheral is 
enabled. The peripheral 
 current can be determined by subtracting the base I
DD
 or I
PD
 current from this limit. Max 
values should be used when calculating total current consumption.
2:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with 
the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD
.
3:
A/D oscillator source is F
RC
.
4:
0.1
F capacitor on V
CAP
 (RF0).