Freescale Semiconductor Demonstration Board for Freescale MC9S12XHY256 Microcontroller DEMO9S12XHY256 DEMO9S12XHY256 Manuale Utente
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DEMO9S12XHY256
Electrical Characteristics
MC9S12XHY-Family Reference Manual, Rev. 1.04
Freescale Semiconductor
741
Table A-16. NVM Timing Characteristics
A.3.2
NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
The standard shipping condition for both the D-Flash and P-Flash memory is erased with security disabled.
However it is recommended that each block or sector is erased before factory programming to ensure that
the full data retention capability is achieved. Data retention time is measured from the last erase operation.
However it is recommended that each block or sector is erased before factory programming to ensure that
the full data retention capability is achieved. Data retention time is measured from the last erase operation.
Conditions are as shown in
, with 40 MHz bus and f
NVMOP
= 1 MHz unless otherwise noted.
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
D External oscillator clock
f
NVMOSC
2
—
40
1
1
Restrictions for oscillator in crystal mode apply.
MHz
2
D Bus frequency for programming or erase operations
f
NVMBUS
1
—
40
MHz
3
D Operating frequency
f
NVMOP
800
—
1050
kHz
4
D P-Flash phrase programming
t
bwpgm
—
171
183
µ
s
6
P P-Flash sector erase time
t
era
—
20
21
ms
7
P Erase All Blocks (Mass erase) time
t
mass
—
101
102
ms
7a
D Unsecure Flash
t
uns
—
101
102
ms
8
D P-Flash erase verify (blank check) time
2
2
Valid for both “Erase verify all” or “Erase verify block” on 256K block without failing locations
t
check
—
—
33500
t
cyc
9a
D D-Flash word programming 1 word
t
dpgm
—
97
104
µ
s
9b
D D-Flash word programming 2 words
t
dpgm
—
167
181
µ
s
9c
D D-Flash word programming 3 words
t
dpgm
—
237
258
µ
s
9d
D D-Flash word programming 4 words
t
dpgm
—
307
335
µ
s
9e
D D-Flash word programming 4 words crossing row
boundary
t
dpgm
—
335
363
µ
s
10
D D-Flash sector erase time
t
eradf
—
5.2
3
3
This is a typical value for a new device
21
ms
11
D D-Flash erase verify (blank check) time
t
check
—
—
17500
t
cyc