Freescale Semiconductor Demonstration Board for Freescale MC9S12XHY256 Microcontroller DEMO9S12XHY256 DEMO9S12XHY256 Manuale Utente
Codici prodotto
DEMO9S12XHY256
Electrical Characteristics
MC9S12XHY-Family Reference Manual, Rev. 1.04
Freescale Semiconductor
739
A.3.1.8
Erase P-Flash Block (FCMD=0x09)
Erasing a 256K NVM block takes
Erasing a 128K NVM block takes
A.3.1.9
Erase P-Flash Sector (FCMD=0x0A)
The typical time to erase a1024-byte P-Flash sector can be calculated using
The maximum time to erase a1024-byte P-Flash sector can be calculated using
A.3.1.10
Unsecure Flash (FCMD=0x0B)
The maximum time for unsecuring the flash is given by
A.3.1.11
Verify Backdoor Access Key (FCMD=0x0C)
The maximum verify backdoor access key time is given by
A.3.1.12
Set User Margin Level (FCMD=0x0D)
The maximum set user margin level time is given by
A.3.1.13
Set Field Margin Level (FCMD=0x0E)
The maximum set field margin level time is given by
t
mass
100100
1
f
NVMOP
-------------------------
70000
1
f
NVMBUS
----------------------------
⋅
+
⋅
≈
t
mass
100100
1
f
NVMOP
-------------------------
35000
1
f
NVMBUS
----------------------------
⋅
+
⋅
≈
t
era
20020
1
f
NVMOP
-------------------
⋅
⎝
⎠
⎛
⎞
700
1
f
NVMBUS
---------------------
⋅
⎝
⎠
⎛
⎞
+
=
t
era
20020
1
f
NVMOP
-------------------
⋅
⎝
⎠
⎛
⎞
1100
1
f
NVMBUS
---------------------
⋅
⎝
⎠
⎛
⎞
+
=
t
uns
100100
1
f
NVMOP
-------------------------
70000
1
f
NVMBUS
----------------------------
⋅
+
⋅
⎝
⎠
⎛
⎞
=
t
400
1
f
NVMBUS
----------------------------
⋅
=
t
350
1
f
NVMBUS
----------------------------
⋅
=