Fairchild Semiconductor N/A MJD44H11TF Scheda Tecnica
Codici prodotto
MJD44H11TF
MJ
D44H1
1
— NP
N E
p
it
a
x
ial Silicon T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MJD44H11 Rev. B1
2
Electrical Characteristics
T
a
= 25
°C unless otherwise noted
* Pulse Test: PW
≤300μs, Duty Cycle≤2%
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
I
C
= 30mA, I
B
= 0
80
V
I
CEO
Collector Cut-off Current
V
CE
= 80V, I
B
= 0
10
μA
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
50
μA
h
FE
*DC Current Gain
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 4A
60
40
40
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= 8A, I
B
= 0.4A
1
V
V
BE
(on)
*Base-Emitter On Voltage
I
C
= 8A, I
B
= 0.8A
1.5
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.5A
50
MHz
C
ob
Output Capacitance
V
CB
=10V, f = 1MHz
130
pF
t
ON
Turn On Time
I
C
= 5A
I
B1
= - I
B2
= 0.5A
300
ns
t
STG
Storage Time
500
ns
t
F
Fall Time
140
ns