Fairchild Semiconductor N/A MJD44H11TF Scheda Tecnica

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MJD44H11TF
Pagina di 5
MJ
D44H1
1
 — NP
N E
p
it
a
x
ial Silicon T
ransistor
© 2009 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
MJD44H11 Rev. B1
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Safe Operating Area
Figure 3. Power Derating
0.01
0.1
1
10
1
10
100
1000
V
CE
 = 1V
 
 
h
FE
, DC CURR
E
N
T
 G
A
IN
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
5m
s
100
μ
s
500
μ
s
1m
s
DC
I
CP
(max)
I
C
(max)
 
 
I
C
[A
],
 CO
L
L
E
C
T
O
C
URRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
5
10
15
20
25
 
 
P
C
[W
],
 POWER
 DI
SSI
PA
TI
ON
T
C
[
o
C], CASE TEMPERATURE