Fairchild Semiconductor N/A FMB3904 Scheda Tecnica
Codici prodotto
FMB3904
F
F
B3904
/ FMB39
0
4 / MMPQ3
904 — NP
N Mu
lt
i-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1
3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300
3. Pulse test: pulse width ≤ 300
μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
μA, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
μA, I
C
= 0
6.0
V
I
BL
Base Cut-Off Current
V
CE
= 30 V, V
BE
= -3 V
50
nA
I
CEX
Collector Cut-Off Current
V
CE
= 30 V, V
BE
= -3 V
50
nA
On Characteristics
(3)
h
FE
DC Current Gain
FFB3904, FMB3904
I
C
= 0.1 mA, V
CE
= 1.0 V
40
MMPQ3904
30
FFB3904, FMB3904
I
C
= 1.0 mA, V
CE
= 1.0 V
70
MMPQ3904
50
FFB3904, FMB3904
I
C
= 10 mA, V
CE
= 1.0 V
100
300
MMPQ3904
75
All Devices
I
C
= 50 mA, V
CE
= 1.0 V
60
All Devices
I
C
= 100 mA, V
CE
= 1.0 V
30
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.2
V
I
C
= 50 mA, I
B
= 5.0 mA
0.3
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.65
0.85
V
I
C
= 50 mA, I
B
= 5.0 mA
0.95
Small-Signal Characteristics (MMPQ3904 only)
f
T
Current Gain-Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
250
MHz
C
ob
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
4.0
pF
C
ib
Input Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
8.0
pF