Manuali utente per Samsung RAM DDR2 2GB, PC667

Sommario

• 1.0 DDR2 Unbuffered DIMM Ordering Information

  4
• 2.0 Features

  4
• 3.0 Address Configuration

  4
• 4.0 x64 DIMM Pin Configurations (Front side/Back side)

  5
• 5.0 x72 DIMM Pin Configurations (Front side/Back side)

  6
• 6.0 Pin Description

  6
• 7.0 Input/Output Function Description

  7
• 8.0 Functional Block Diagram :

  8
  • 8.1 4GB, 512Mx64 Module - M378T5263AZ(H)3

    8
  • 8.2 4GB, 512Mx72 ECC Module - M391T5263AZ(H)3

    9
• 9.0 Absolute Maximum DC Ratings

  10
• 10.0 AC & DC Operating Conditions

  10
  • 10.1 Recommended DC Operating Conditions (SSTL - 1.8)

    10
  • 10.2 Operating Temperature Condition

    11
  • 10.3 Input DC Logic Level

    11
  • 10.4 Input AC Logic Level

    11
  • 10.5 AC Input Test Conditions

    11
• 11.0 IDD Specification Parameters Definition

  12
• 12.0 Operating Current Table :

  13
  • 12.1 M378T5263AZ(H)3 : 4GB(256Mx8 *16) Module

    13
  • 12.2 M391T5263AZ(H)3 : 4GB(256Mx8 *18 ) ECC Module

    13
• 13.0 Input/Output Capacitance

  14
• 14.0 Electrical Characteristics & AC Timing for DDR2-800/667/533

  14
  • 14.1 Refresh Parameters by Device Density

    14
  • 14.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

    14
  • 14.3 Timing parameters by speed grade (DDR2-800 and DDR2-667)

    15
  • 14.4 Timing parameters by speed grade (DDR2-533)

    17
• 15.0 Physical Dimensions :

  19