Samsung RAM DDR2 2GB, PC667 マニュアル

目次

• 1.0 DDR2 Unbuffered DIMM Ordering Information

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• 2.0 Features

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• 3.0 Address Configuration

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• 4.0 x64 DIMM Pin Configurations (Front side/Back side)

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• 5.0 x72 DIMM Pin Configurations (Front side/Back side)

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• 6.0 Pin Description

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• 7.0 Input/Output Function Description

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• 8.0 Functional Block Diagram :

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  • 8.1 4GB, 512Mx64 Module - M378T5263AZ(H)3

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  • 8.2 4GB, 512Mx72 ECC Module - M391T5263AZ(H)3

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• 9.0 Absolute Maximum DC Ratings

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• 10.0 AC & DC Operating Conditions

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  • 10.1 Recommended DC Operating Conditions (SSTL - 1.8)

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  • 10.2 Operating Temperature Condition

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  • 10.3 Input DC Logic Level

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  • 10.4 Input AC Logic Level

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  • 10.5 AC Input Test Conditions

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• 11.0 IDD Specification Parameters Definition

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• 12.0 Operating Current Table :

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  • 12.1 M378T5263AZ(H)3 : 4GB(256Mx8 *16) Module

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  • 12.2 M391T5263AZ(H)3 : 4GB(256Mx8 *18 ) ECC Module

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• 13.0 Input/Output Capacitance

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• 14.0 Electrical Characteristics & AC Timing for DDR2-800/667/533

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  • 14.1 Refresh Parameters by Device Density

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  • 14.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

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  • 14.3 Timing parameters by speed grade (DDR2-800 and DDR2-667)

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  • 14.4 Timing parameters by speed grade (DDR2-533)

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• 15.0 Physical Dimensions :

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