Freescale Semiconductor MPC5200B ユーザーズマニュアル

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Functional Description
MPC5200B Users Guide, Rev. 1
Freescale Semiconductor
8-15
8.4
Functional Description
8.4.1
External Signals (SDRAM Side)
Table 8-3. SDRAM External Signals
Signal Name
Description
Outputs
MEM_CLK
Memory Clock (frequency is the same as the internal XL bus clock). Maximum allowed 
value is 132 MHz.
MEM_CLK
Inverted Memory Clock, used for DDR-SDRAM devices.
Internally generated “DQS” for SDR-SDRAM devices.
MEM_CLK_EN
Memory Clock Enable (CKE). When low, the SDRAM is disabled. Used to switch memory 
into and out of self-refresh/power-down modes.
MEM_CS[0],
MEM_CS[1]
Memory Command Select. Each space has a command select to enable commands
MEM_RAS
Memory Row Address Select
MEM_CAS
Memory Column Address Select
MEM_WE
Memory Write Enable
MEM_MA[12:0]
Memory Multiplexed Address. These are used as row address, column address, or 
Mode(Extended Mode) register data, depending on the command issued.
Row address during Active command.
Column address during Read and Write commands. MEM_MA10 is used as a control 
signal instead of an address line, to control Auto Precharge operation. The Auto Precharge 
control bit is not counted as a column address bit. The Memory Controller does not use 
Auto Precharge.
Mode register data during Load Mode Register and Load Extended Mode Register (DDR 
only) commands.
MEM_MBA[1:0]
Memory Bank Address, or Mode register select, depending on the command issued.
Bank address during Precharge Selected, Active, Read, and Write commands. The 
Memory Controller does not use the Precharge Selected command.
Mode register select during Load Mode Register and Load Extended Mode Register (DDR 
only) commands. Although SDR memory only has a single internal Mode register, the Bank 
Address bits must still be valid.
MEM_DQM[3:0]
Memory Data Mask. Addressing = 0:3
0 Data byte read/write is enabled
1 Data byte read/write is inhibited
SDR memories 3-state inhibited data during reads; DDR memories ignore Data Mask 
during reads. The memory controller never masks read data.
Bidirectional Signals
MEM_MDQ[31:0]
Memory Data. Addressing = 0:3.
MEM_MDQS[3:0]
Memory Data Strobe, DDR only. Addressing = 0:3.
Note:  Signals MEM_RAS, MEM_CAS, MEM_WE, and MEM_CLK_EN encode the SDRAM commands to control the 
different SDRAM operations.
Note:  For 16-bit mode external pull-down devices are required on MEM_MDQS[1:0].