Samsung M393B5670EH1-CF8 ユーザーズマニュアル
Rev. 1.06 July 2009
36 of 53
DDR3 SDRAM
Registered DIMM
17.0 Electrical Characteristics and AC timing
(0
°C<T
CASE
≤95 °C, V
DDQ
= 1.5V
± 0.075V; V
DD
= 1.5V
± 0.075V)
17.1 Refresh Parameters by Device Density
Note :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or
requirements referred to in this material.
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or
requirements referred to in this material.
17.2 Speed Bins and CL, tRCD, tRC and tRAS for Corresponding Bin
Parameter
Symbol
1Gb
2Gb
4Gb
8Gb
Units
Note
All Bank Refresh to active/refresh cmd time
tRFC
110
160
300
350
ns
Average periodic refresh interval
tREFI
0
°C ≤ T
CASE
≤ 85°C
7.8
7.8
7.8
7.8
µs
85
°C < T
CASE
≤ 95°C
3.9
3.9
3.9
3.9
µs
1
Speed
DDR3-800
DDR3-1066
DDR3-1333
Units
Note
Bin (CL - tRCD - tRP)
6-6-6
7-7-7
9-9-9
Parameter
min
min
min
CL
6
7
9
tCK
tRCD
15
13.13
13.5
ns
tRP
15
13.13
13.5
ns
tRAS
37.5
37.5
36
ns
tRC
52.5
50.63
49.5
ns
tRRD
10
7.5
6.0
ns
tFAW
40
37.5
30
ns