Intel QX9775 EU80574XL088N データシート
製品コード
EU80574XL088N
Electrical Specifications
30
Datasheet
NOTES:
1.
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
TT
referred to in these specifications refers to instantaneous V
TT
.
3.
Measured at 0.1*V
TT
.
4.
Measured at 0.9*V
TT
.
5.
For Vin between 0 V and V
TT
. Measured when the driver is tristated.
NOTES:
1.
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
Measured at 0.2*V
TT
.
3.
V
OH
is determined by value of the external pullup resistor to V
TT
.
4.
For V
IN
between 0 V and V
OH
.
2.13.1
V
CC
Overshoot Specification
The processor can tolerate short transient overshoot events where V
CC
exceeds the VID
voltage when transitioning from a high-to-low current load condition. This overshoot
cannot exceed VID + V
OS_MAX
(V
OS_MAX
is the maximum allowable overshoot above
VID). These specifications apply to the processor die voltage as measured across the
VCC_DIE_SENSE and VSS_DIE_SENSE lands and across the VCC_DIE_SENSE2 and
VSS_DIE_SENSE2 lands.
Table 2-15. CMOS Signal Input/Output Group and TAP Signal Group
DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
-0.10
0.00
0.3 * V
TT
V
2,6
V
IH
Input High Voltage
0.7 * V
TT
V
TT
V
TT
+ 0.1
V
2
V
OL
Output Low Voltage
-0.10
0
0.1 * V
TT
V
2
V
OH
Output High Voltage
0.9 * V
TT
V
TT
V
TT
+ 0.1
V
2
I
OL
Output Low Current
1.70
N/A
4.70
mA
3
I
OH
Output High Current
1.70
N/A
4.70
mA
4
I
LI
Input Leakage Current
N/A
N/A
± 100
μA
5
Table 2-16. Open Drain Output Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
OL
Output Low Voltage
0
N/A
0.20 * V
TT
V
V
OH
Output High Voltage
0.95 * V
TT
V
TT
1.05 * V
TT
V
3
I
OL
Output Low Current
16
N/A
50
mA
2
I
LO
Leakage Current
N/A
N/A
± 200
μA
4
Table 2-17. V
CC
Overshoot Specifications
Symbol
Parameter
Min
Max
Units
Figure
Notes
V
OS_MAX
Magnitude of V
CC
overshoot above
VID
—
50
mV
T
OS_MAX
Time duration of V
CC
overshoot above
VID
—
25
µs