Microchip Technology MCU PIC10F322T-I/OT SOT-23-6 MCP PIC10F322T-I/OT データシート

 2011 Microchip Technology Inc.

DS41585A-page 61

9.2.3

ERASING FLASH PROGRAM 
MEMORY

While executing code, program memory can only be
erased by rows. To erase a row:
1.

Load the PMADRH:PMADRL register pair with
any address within the row to be erased.

2.

Clear the CFGS bit of the PMCON1 register.

3.

Set the FREE and WREN bits of the PMCON1
register.

4.

Write 55h, then AAh, to PMCON2 (Flash
programming unlock sequence).

5.

Set control bit WR of the PMCON1 register to
begin the erase operation.

See 

.

After the “BSF PMCON1,WR” instruction, the processor
requires two cycles to set up the erase operation. The
user must place two NOP instructions after the WR bit is
set. The processor will halt internal operations for the
typical 2 ms erase time. This is not Sleep mode as the
clocks and peripherals will continue to run. After the
erase cycle, the processor will resume operation with
the third instruction after the PMCON1 write instruction.

Disable Interrupts

(GIE = 0)

Start 

Erase Operation

Select 

Program or Configuration Memory 

(CFGS)

Select Row Address

(PMADRH:PMADRL)

Select Erase Operation

(FREE = 1)

Enable Write/Erase Operation 

(WREN = 1)

Unlock Sequence

Disable Write/Erase Operation 

(WREN = 0)

Re-enable Interrupts

(GIE = 1)

End 

Erase Operation

CPU stalls while 

ERASE operation completes

(2ms typical)